Samsung Electronics Co., Ltd. (LON:BC94) (KRX:005930) today announced that it has started mass producing its most advanced DDR3 memory which is based on a new 20 nanometer process technology. This process, according to Samsung Electronics, saves up to 25 percent of the energy consumed by other modules made by the older 25 nanometer process technology.
Samsung said that it has advanced the DRAM scaling while at the same time using the readily available immersion ArF lithography. Its most advanced 20-nanometer (nm) 4-gigabit (Gb) DDR3 DRAM will be used in a wide range of applications.
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